TDI and Ostendo has jointly made a breakthrough on semi-polar (11-22) GaN wafers which are more than 2.5x the emission intensity of c-plane GaN based LED structures.

These results have in common with the research conducted by Sumitomo Electric Industries who discovered that green laser diodes (LD) grown on the semi-polar GaN plane are more efficient than those grown on the conventional c plane.

It’s said that Ostendo & TDI had entered into an Information Exchange Agreement with Palo Alto Research Center (PARC) in 2008.

They agreed to make semi-polar GaN wafers available for PARC to grow LED and Laser Diode structures on and independently validate and report the achieved results.

As part of the validation, PARC has grown MQW LED structures on the semi-polar GaN side-by-side with a reference c-plane LED structure in the same MOCVD run. The LED structure grown on the semi-polar GaN achieved more than 2.5x more emission intensity than the reference LED structure grown on c-plane GaN. Also, the semi-polar GaN allowed for higher indium (In) incorporation resulting in longer peak wavelength of ~25 nm for the structure grown.